Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes
نویسندگان
چکیده
W. G. Wang,1,* C. Ni,2 G. X. Miao,3 C. Weiland,2 L. R. Shah,1 X. Fan,1 P. Parson,1 J. Jordan-sweet,4 X. M. Kou,1 Y. P. Zhang,1 R. Stearrett,1 E. R. Nowak,1 R. Opila,2 J. S. Moodera,3 and J. Q. Xiao1,† 1Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA 2Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA 3Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139, USA 4IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA Received 24 November 2009; revised manuscript received 16 March 2010; published 7 April 2010
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